onsemi NGTB15N120LWG IGBT, 30 A 1200 V, 3-Pin TO-247, Through Hole

RS Stock No.: 773-7352Brand: ON SemiconductorManufacturers Part No.: NGTB15N120LWGIMPA: 0
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Technical documents

Specifications

Channel Type

N

Pin Count

3

Minimum Operating Temperature

-55 °C

Maximum Gate Emitter Voltage

±20V

Transistor Configuration

Single

Mounting Type

Through Hole

Maximum Operating Temperature

+150 °C

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

1200 V

Package Type

TO-247

Maximum Power Dissipation

156 W

Brand

ON Semiconductor

Dimensions

16.26 x 5.3 x 21.08mm

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P.O.A.

onsemi NGTB15N120LWG IGBT, 30 A 1200 V, 3-Pin TO-247, Through Hole

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

P.O.A.

onsemi NGTB15N120LWG IGBT, 30 A 1200 V, 3-Pin TO-247, Through Hole
Stock information temporarily unavailable.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Technical documents

Specifications

Channel Type

N

Pin Count

3

Minimum Operating Temperature

-55 °C

Maximum Gate Emitter Voltage

±20V

Transistor Configuration

Single

Mounting Type

Through Hole

Maximum Operating Temperature

+150 °C

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

1200 V

Package Type

TO-247

Maximum Power Dissipation

156 W

Brand

ON Semiconductor

Dimensions

16.26 x 5.3 x 21.08mm