Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
10 A
Maximum Collector Emitter Voltage
50 V
Package Type
TO-220F-3FS
Mounting Type
Through Hole
Maximum Power Dissipation
25 W
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.16 x 4.7 x 15.87mm
Country of Origin
Korea, Republic Of
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P.O.A.
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P.O.A.
50
Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
10 A
Maximum Collector Emitter Voltage
50 V
Package Type
TO-220F-3FS
Mounting Type
Through Hole
Maximum Power Dissipation
25 W
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.16 x 4.7 x 15.87mm
Country of Origin
Korea, Republic Of