onsemi FGHL50T65SQ IGBT, 100 A 650 V, 3-Pin TO-247, Through Hole

RS Stock No.: 189-0182Brand: onsemiManufacturers Part No.: FGHL50T65SQ
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Technical documents

Specifications

Brand

onsemi

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

268 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Dimensions

15.87 x 4.82 x 20.82mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

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Please check again later.

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P.O.A.

onsemi FGHL50T65SQ IGBT, 100 A 650 V, 3-Pin TO-247, Through Hole

30

Available in multiples of 30
30P.O.A.
60P.O.A.
90P.O.A.
120P.O.A.
150P.O.A.
180P.O.A.
210P.O.A.
240P.O.A.
270P.O.A.
300P.O.A.
330P.O.A.
360P.O.A.
390P.O.A.
420P.O.A.
450P.O.A.

P.O.A.

onsemi FGHL50T65SQ IGBT, 100 A 650 V, 3-Pin TO-247, Through Hole
Stock information temporarily unavailable.

30

Available in multiples of 30
30P.O.A.
60P.O.A.
90P.O.A.
120P.O.A.
150P.O.A.
180P.O.A.
210P.O.A.
240P.O.A.
270P.O.A.
300P.O.A.
330P.O.A.
360P.O.A.
390P.O.A.
420P.O.A.
450P.O.A.

Technical documents

Specifications

Brand

onsemi

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

268 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Dimensions

15.87 x 4.82 x 20.82mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C