onsemi MC1413BDR2G, 7-element NPN Darlington Transistor, 500 mA 50 V HFE:1000, 16-Pin SOIC

RS Stock No.: 178-7560Brand: onsemiManufacturers Part No.: MC1413BDR2G
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Technical documents

Specifications

Brand

onsemi

Transistor Type

NPN

Maximum Continuous Collector Current

500 mA

Maximum Collector Emitter Voltage

50 V

Maximum Emitter Base Voltage

5 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

16

Transistor Configuration

Common Emitter

Number of Elements per Chip

7

Minimum DC Current Gain

1000

Maximum Collector Emitter Saturation Voltage

1.6 V

Maximum Operating Temperature

+85 °C

Length

10mm

Height

1.5mm

Width

4mm

Minimum Operating Temperature

-40 °C

Dimensions

10 x 4 x 1.5mm

Stock information temporarily unavailable.

P.O.A.

onsemi MC1413BDR2G, 7-element NPN Darlington Transistor, 500 mA 50 V HFE:1000, 16-Pin SOIC

P.O.A.

onsemi MC1413BDR2G, 7-element NPN Darlington Transistor, 500 mA 50 V HFE:1000, 16-Pin SOIC
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

onsemi

Transistor Type

NPN

Maximum Continuous Collector Current

500 mA

Maximum Collector Emitter Voltage

50 V

Maximum Emitter Base Voltage

5 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

16

Transistor Configuration

Common Emitter

Number of Elements per Chip

7

Minimum DC Current Gain

1000

Maximum Collector Emitter Saturation Voltage

1.6 V

Maximum Operating Temperature

+85 °C

Length

10mm

Height

1.5mm

Width

4mm

Minimum Operating Temperature

-40 °C

Dimensions

10 x 4 x 1.5mm