Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Collector Emitter Voltage
100 V
Package Type
SOT-93
Mounting Type
Through Hole
Maximum Power Dissipation
125 W
Minimum DC Current Gain
15
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Pin Count
3
Number of Elements per Chip
1
Minimum Operating Temperature
-65 °C
Dimensions
15.2 x 4.9 x 20.35mm
Maximum Operating Temperature
+150 °C
Base Current
5A
Country of Origin
China
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P.O.A.
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P.O.A.
30
Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Collector Emitter Voltage
100 V
Package Type
SOT-93
Mounting Type
Through Hole
Maximum Power Dissipation
125 W
Minimum DC Current Gain
15
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Pin Count
3
Number of Elements per Chip
1
Minimum Operating Temperature
-65 °C
Dimensions
15.2 x 4.9 x 20.35mm
Maximum Operating Temperature
+150 °C
Base Current
5A
Country of Origin
China