Semikron SKM200GB12E4 Dual Half Bridge IGBT Module, 314 A 1200 V, 7-Pin SEMITRANS3, Panel Mount

RS Stock No.: 687-4973Brand: SemikronManufacturers Part No.: SKM200GB12E4
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Technical documents

Specifications

Maximum Continuous Collector Current

314 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Package Type

SEMITRANS3

Configuration

Dual Half Bridge

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Series

Dimensions

106.4 x 61.4 x 30mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+175 °C

Product details

Dual IGBT Modules

A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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P.O.A.

Semikron SKM200GB12E4 Dual Half Bridge IGBT Module, 314 A 1200 V, 7-Pin SEMITRANS3, Panel Mount

P.O.A.

Semikron SKM200GB12E4 Dual Half Bridge IGBT Module, 314 A 1200 V, 7-Pin SEMITRANS3, Panel Mount
Stock information temporarily unavailable.

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quantityUnit price
1 - 4P.O.A.
5 - 9P.O.A.
10 - 49P.O.A.
50 - 99P.O.A.
100+P.O.A.

Technical documents

Specifications

Maximum Continuous Collector Current

314 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Package Type

SEMITRANS3

Configuration

Dual Half Bridge

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Series

Dimensions

106.4 x 61.4 x 30mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+175 °C

Product details

Dual IGBT Modules

A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.