N-Channel MOSFET Transistor, 66 A, 55 V, 3-Pin TO-220AB Fairchild HUF75333P3
Technical documents
Specifications
Channel Type
N
Maximum Continuous Drain Current
66 A
Maximum Drain Source Voltage
55 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
150 W
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
70 nC @ 20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Width
4.83mm
Height
9.65mm
Minimum Operating Temperature
-55 °C
Product details
UltraFET® MOSFET, Fairchild Semiconductor
UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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P.O.A.
1
P.O.A.
1
Buy in bulk
| quantity | Unit price |
|---|---|
| 1 - 24 | P.O.A. |
| 25 - 99 | P.O.A. |
| 100 - 249 | P.O.A. |
| 250 - 499 | P.O.A. |
| 500+ | P.O.A. |
Technical documents
Specifications
Channel Type
N
Maximum Continuous Drain Current
66 A
Maximum Drain Source Voltage
55 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
150 W
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
70 nC @ 20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Width
4.83mm
Height
9.65mm
Minimum Operating Temperature
-55 °C
Product details
UltraFET® MOSFET, Fairchild Semiconductor
UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.