P-Channel MOSFET, 100 A, 30 V, 8-Pin TDSON Infineon BSC030P03NS3GAUMA1
Technical documents
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Package Type
TDSON
Series
OptiMOS P
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4.6 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.1mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Width
5.35mm
Number of Elements per Chip
1
Forward Diode Voltage
1.1V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Product details
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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P.O.A.
5000
P.O.A.
5000
Technical documents
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Package Type
TDSON
Series
OptiMOS P
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4.6 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.1mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Width
5.35mm
Number of Elements per Chip
1
Forward Diode Voltage
1.1V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Product details
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.