N-Channel MOSFET, 4 A, 800 V, 3 + Tab-Pin TO-220FP Infineon IPA80R1K4P7XKSA1
Technical documents
Specifications
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
N
Pin Count
3 + Tab
Minimum Operating Temperature
-55 °C
Transistor Configuration
Single
Forward Diode Voltage
0.9V
Mounting Type
Through Hole
Minimum Gate Threshold Voltage
2.5V
Maximum Operating Temperature
+150 °C
Maximum Gate Threshold Voltage
3.5V
Maximum Drain Source Voltage
800 V
Maximum Gate Source Voltage
+30 V
Maximum Continuous Drain Current
4 A
Maximum Power Dissipation
24 W
Width
4.9mm
Series
CoolMOS P7
Package Type
TO-220FP
Length
10.65mm
Height
16.15mm
Maximum Drain Source Resistance
3.1 Ω
Brand
InfineonTypical Gate Charge @ Vgs
10 nC @ 10 V
Country of Origin
China
Product details
Motor Driven
Low noise
Decimal digits are white, whilst the others are red
Supplied with panel clip and bezel for mounting through 50mm dia. hole
46 x 46mm cut out
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P.O.A.
5
P.O.A.
5
Technical documents
Specifications
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
N
Pin Count
3 + Tab
Minimum Operating Temperature
-55 °C
Transistor Configuration
Single
Forward Diode Voltage
0.9V
Mounting Type
Through Hole
Minimum Gate Threshold Voltage
2.5V
Maximum Operating Temperature
+150 °C
Maximum Gate Threshold Voltage
3.5V
Maximum Drain Source Voltage
800 V
Maximum Gate Source Voltage
+30 V
Maximum Continuous Drain Current
4 A
Maximum Power Dissipation
24 W
Width
4.9mm
Series
CoolMOS P7
Package Type
TO-220FP
Length
10.65mm
Height
16.15mm
Maximum Drain Source Resistance
3.1 Ω
Brand
InfineonTypical Gate Charge @ Vgs
10 nC @ 10 V
Country of Origin
China
Product details
Motor Driven
Low noise
Decimal digits are white, whilst the others are red
Supplied with panel clip and bezel for mounting through 50mm dia. hole
46 x 46mm cut out