Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
600 V
Series
CoolMOS™ CE
Package Type
IPAK SL (TO-251 SL)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.4 Ohm
Maximum Gate Threshold Voltage
3.5V
Number of Elements per Chip
1
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Stock information temporarily unavailable.
P.O.A.
N-Channel MOSFET, 2.6 A, 600 V, 3-Pin IPAK Infineon IPS60R3K4CEAKMA1
Select packaging type
Production pack (Tube)
50
P.O.A.
N-Channel MOSFET, 2.6 A, 600 V, 3-Pin IPAK Infineon IPS60R3K4CEAKMA1
Stock information temporarily unavailable.
Select packaging type
Production pack (Tube)
50
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
600 V
Series
CoolMOS™ CE
Package Type
IPAK SL (TO-251 SL)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.4 Ohm
Maximum Gate Threshold Voltage
3.5V
Number of Elements per Chip
1