N-Channel MOSFET, 46 A, 700 V, 4-Pin TO-247-4 Infineon IPZ65R045C7XKSA1

RS Stock No.: 145-9726Brand: InfineonManufacturers Part No.: IPZ65R045C7XKSA1
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

46 A

Maximum Drain Source Voltage

700 V

Series

CoolMOS™ C7

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

227 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

21.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

16.13mm

Typical Gate Charge @ Vgs

93 nC @ 10 V

Height

5.21mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Country of Origin

China

Product details

Infineon CoolMOS™C6/C7 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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P.O.A.

N-Channel MOSFET, 46 A, 700 V, 4-Pin TO-247-4 Infineon IPZ65R045C7XKSA1

30

Available in multiples of 30
30P.O.A.
60P.O.A.
90P.O.A.
120P.O.A.
150P.O.A.
180P.O.A.
210P.O.A.
240P.O.A.
270P.O.A.
300P.O.A.
330P.O.A.
360P.O.A.
390P.O.A.
420P.O.A.
450P.O.A.

P.O.A.

N-Channel MOSFET, 46 A, 700 V, 4-Pin TO-247-4 Infineon IPZ65R045C7XKSA1
Stock information temporarily unavailable.

30

Available in multiples of 30
30P.O.A.
60P.O.A.
90P.O.A.
120P.O.A.
150P.O.A.
180P.O.A.
210P.O.A.
240P.O.A.
270P.O.A.
300P.O.A.
330P.O.A.
360P.O.A.
390P.O.A.
420P.O.A.
450P.O.A.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

46 A

Maximum Drain Source Voltage

700 V

Series

CoolMOS™ C7

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

227 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

21.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

16.13mm

Typical Gate Charge @ Vgs

93 nC @ 10 V

Height

5.21mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Country of Origin

China

Product details

Infineon CoolMOS™C6/C7 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.