P-Channel MOSFET, 5.4 A, 30 V, 8-Pin SOIC Infineon IRF9335PBF

RS Stock No.: 725-9252Brand: InfineonManufacturers Part No.: IRF9335PBF
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Technical documents

Specifications

Channel Type

P

Maximum Continuous Drain Current

5.4 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

59 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

4.7 nC @ 4.5 V, 9.1 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

4.98mm

Width

3.99mm

Transistor Material

Si

Series

HEXFET

Minimum Operating Temperature

-55 °C

Height

1.57mm

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P.O.A.

P-Channel MOSFET, 5.4 A, 30 V, 8-Pin SOIC Infineon IRF9335PBF
Select packaging type

P.O.A.

P-Channel MOSFET, 5.4 A, 30 V, 8-Pin SOIC Infineon IRF9335PBF

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

You may be interested in

Technical documents

Specifications

Channel Type

P

Maximum Continuous Drain Current

5.4 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

59 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

4.7 nC @ 4.5 V, 9.1 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

4.98mm

Width

3.99mm

Transistor Material

Si

Series

HEXFET

Minimum Operating Temperature

-55 °C

Height

1.57mm

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