N-Channel MOSFET, 850 mA, 30 V, 3-Pin SOT-23 Nexperia BSH103,215

RS Stock No.: 103-7554Brand: NexperiaManufacturers Part No.: BSH103,215
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

850 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

2.1 nC @ 4.5 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Height

1mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-Channel MOSFET, up to 30V

MOSFET Transistors, NXP Semiconductors

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P.O.A.

N-Channel MOSFET, 850 mA, 30 V, 3-Pin SOT-23 Nexperia BSH103,215

P.O.A.

N-Channel MOSFET, 850 mA, 30 V, 3-Pin SOT-23 Nexperia BSH103,215
Stock information temporarily unavailable.

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

850 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

2.1 nC @ 4.5 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Height

1mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-Channel MOSFET, up to 30V

MOSFET Transistors, NXP Semiconductors