P-Channel MOSFET, 2.5 A, 60 V, 3-Pin SOT-223 onsemi NDT2955
Technical documents
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.56mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.5mm
Typical Gate Charge @ Vgs
11 nC @ 10 V
Height
1.6mm
Minimum Operating Temperature
-55 °C
Product details
Enhancement Mode P-Channel MOSFET, ON Semiconductor
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.
Features and Benefits:
• Voltage controlled P-Channel small signal switch
• High-Density cell design
• High saturation current
• Superior switching
• Great rugged and reliable performance
• DMOS technology
Applications:
• Load Switching
• DC/DC converter
• Battery protection
• Power management control
• DC motor control
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Stock information temporarily unavailable.
Please check again later.
P.O.A.
4000
P.O.A.
4000
Technical documents
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.56mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.5mm
Typical Gate Charge @ Vgs
11 nC @ 10 V
Height
1.6mm
Minimum Operating Temperature
-55 °C
Product details
Enhancement Mode P-Channel MOSFET, ON Semiconductor
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.
Features and Benefits:
• Voltage controlled P-Channel small signal switch
• High-Density cell design
• High saturation current
• Superior switching
• Great rugged and reliable performance
• DMOS technology
Applications:
• Load Switching
• DC/DC converter
• Battery protection
• Power management control
• DC motor control
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.