N-Channel MOSFET, 100 A, 60 V, 3-Pin D2PAK STMicroelectronics STB100N6F7

RS Stock No.: 906-4668Brand: STMicroelectronicsManufacturers Part No.: STB100N6F7
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Technical documents

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Series

STripFET F7

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5.6 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.4mm

Typical Gate Charge @ Vgs

12.6 nC @ 10 V

Width

9.35mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

4.6mm

Product details

N-Channel STripFET™ F7 Series, STMicroelectronics

The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.

MOSFET Transistors, STMicroelectronics

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P.O.A.

N-Channel MOSFET, 100 A, 60 V, 3-Pin D2PAK STMicroelectronics STB100N6F7
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 1
5P.O.A.
10P.O.A.
15P.O.A.
20P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.

P.O.A.

N-Channel MOSFET, 100 A, 60 V, 3-Pin D2PAK STMicroelectronics STB100N6F7
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 1
5P.O.A.
10P.O.A.
15P.O.A.
20P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.

Technical documents

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Series

STripFET F7

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5.6 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.4mm

Typical Gate Charge @ Vgs

12.6 nC @ 10 V

Width

9.35mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

4.6mm

Product details

N-Channel STripFET™ F7 Series, STMicroelectronics

The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.

MOSFET Transistors, STMicroelectronics