SiC N-Channel MOSFET Module, 25 A, 600 V Depletion, 3-Pin TO-220FP STMicroelectronics STP33N60DM6

RS Stock No.: 202-5529Brand: STMicroelectronicsManufacturers Part No.: STP33N60DM6
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Technical documents

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220FP

Series

ST

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.115 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

4.75V

Transistor Material

SiC

Number of Elements per Chip

1

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P.O.A.

SiC N-Channel MOSFET Module, 25 A, 600 V Depletion, 3-Pin TO-220FP STMicroelectronics STP33N60DM6

50

Available in multiples of 50
50P.O.A.
100P.O.A.
150P.O.A.
200P.O.A.
250P.O.A.
300P.O.A.
350P.O.A.
400P.O.A.
450P.O.A.
500P.O.A.
550P.O.A.
600P.O.A.
650P.O.A.
700P.O.A.
750P.O.A.

P.O.A.

SiC N-Channel MOSFET Module, 25 A, 600 V Depletion, 3-Pin TO-220FP STMicroelectronics STP33N60DM6
Stock information temporarily unavailable.

50

Available in multiples of 50
50P.O.A.
100P.O.A.
150P.O.A.
200P.O.A.
250P.O.A.
300P.O.A.
350P.O.A.
400P.O.A.
450P.O.A.
500P.O.A.
550P.O.A.
600P.O.A.
650P.O.A.
700P.O.A.
750P.O.A.

Technical documents

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220FP

Series

ST

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.115 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

4.75V

Transistor Material

SiC

Number of Elements per Chip

1