Technical documents
Specifications
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
60 V
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
43 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Length
5mm
Typical Gate Charge @ Vgs
10.5 nC @ 4.5 V
Width
4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
1.5mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
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P.O.A.
2500
P.O.A.
2500
Technical documents
Specifications
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
60 V
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
43 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Length
5mm
Typical Gate Charge @ Vgs
10.5 nC @ 4.5 V
Width
4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
1.5mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V