N-Channel MOSFET, 19 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIR462DP-T1-GE3

RS Stock No.: 710-3402Brand: VishayManufacturers Part No.: SIR462DP-T1-GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

4.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

20 nC @ 10 V, 8.8 nC @ 4.5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

4.9mm

Width

5.89mm

Minimum Operating Temperature

-55 °C

Height

1.04mm

Country of Origin

China

Product details

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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P.O.A.

N-Channel MOSFET, 19 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIR462DP-T1-GE3
Select packaging type

P.O.A.

N-Channel MOSFET, 19 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIR462DP-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

4.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

20 nC @ 10 V, 8.8 nC @ 4.5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

4.9mm

Width

5.89mm

Minimum Operating Temperature

-55 °C

Height

1.04mm

Country of Origin

China

Product details

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor