Dual N-Channel MOSFET, 9 A, 20 V, 6-Pin U-DFN2030 Diodes Inc DMN2014LHAB-13

RS Stock No.: 246-6788Brand: DiodesZetexManufacturers Part No.: DMN2014LHAB-13
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Technical documents

Specifications

Brand

DiodesZetex

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

20 V

Package Type

U-DFN2030

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

0.028 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Number of Elements per Chip

2

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P.O.A.

Dual N-Channel MOSFET, 9 A, 20 V, 6-Pin U-DFN2030 Diodes Inc DMN2014LHAB-13

10000

Available in multiples of 10000
10000P.O.A.
20000P.O.A.
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150000P.O.A.

P.O.A.

Dual N-Channel MOSFET, 9 A, 20 V, 6-Pin U-DFN2030 Diodes Inc DMN2014LHAB-13
Stock information temporarily unavailable.

10000

Available in multiples of 10000
10000P.O.A.
20000P.O.A.
30000P.O.A.
40000P.O.A.
50000P.O.A.
60000P.O.A.
70000P.O.A.
80000P.O.A.
90000P.O.A.
100000P.O.A.
110000P.O.A.
120000P.O.A.
130000P.O.A.
140000P.O.A.
150000P.O.A.

Technical documents

Specifications

Brand

DiodesZetex

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

20 V

Package Type

U-DFN2030

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

0.028 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Number of Elements per Chip

2