Diodes Inc N-Channel MOSFET, 1.3 A, 20 V, 3-Pin X2-DFN1006 DMN2300UFB4-7B

RS Stock No.: 770-5128Brand: DiodesZetexManufacturers Part No.: DMN2300UFB4-7B
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Technical documents

Specifications

Brand

DiodesZetex

Channel Type

N

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

20 V

Package Type

X2-DFN1006

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.95V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Width

0.65mm

Transistor Material

Si

Number of Elements per Chip

1

Length

1.05mm

Typical Gate Charge @ Vgs

1.6 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

0.35mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Stock information temporarily unavailable.

P.O.A.

Diodes Inc N-Channel MOSFET, 1.3 A, 20 V, 3-Pin X2-DFN1006 DMN2300UFB4-7B
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 50.

Production -

Available in multiples of 50.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 50
1P.O.A.
51P.O.A.
101P.O.A.
151P.O.A.
201P.O.A.
251P.O.A.
301P.O.A.
351P.O.A.
401P.O.A.
451P.O.A.
501P.O.A.
551P.O.A.
601P.O.A.
651P.O.A.
701P.O.A.

P.O.A.

Diodes Inc N-Channel MOSFET, 1.3 A, 20 V, 3-Pin X2-DFN1006 DMN2300UFB4-7B
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 50.

Production -

Available in multiples of 50.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 50
1P.O.A.
51P.O.A.
101P.O.A.
151P.O.A.
201P.O.A.
251P.O.A.
301P.O.A.
351P.O.A.
401P.O.A.
451P.O.A.
501P.O.A.
551P.O.A.
601P.O.A.
651P.O.A.
701P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

DiodesZetex

Channel Type

N

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

20 V

Package Type

X2-DFN1006

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.95V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Width

0.65mm

Transistor Material

Si

Number of Elements per Chip

1

Length

1.05mm

Typical Gate Charge @ Vgs

1.6 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

0.35mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.