N-Channel MOSFET Transistor, 57 A, 100 V, 3-Pin TO-220AB International Rectifier IRF3710PBF
Technical documents
Specifications
Channel Type
N
Maximum Continuous Drain Current
57 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
130 nC @ 10 V
Number of Elements per Chip
1
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Length
10.54mm
Width
4.69mm
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
8.77mm
P.O.A.
1
P.O.A.
1
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Technical documents
Specifications
Channel Type
N
Maximum Continuous Drain Current
57 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
130 nC @ 10 V
Number of Elements per Chip
1
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Length
10.54mm
Width
4.69mm
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
8.77mm