IXYS HiperFET, Polar N-Channel MOSFET, 170 A, 100 V, 3-Pin TO-247 IXFH170N10P
Technical documents
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
170 A
Maximum Drain Source Voltage
100 V
Series
HiperFET, Polar
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
714 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
198 nC @ 10 V
Width
5.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
16.26mm
Maximum Operating Temperature
+175 °C
Height
21.46mm
Minimum Operating Temperature
-55 °C
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
P.O.A.
1
P.O.A.
1
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price |
|---|---|
| 1 - 24 | P.O.A. |
| 25 - 99 | P.O.A. |
| 100 - 249 | P.O.A. |
| 250 - 499 | P.O.A. |
| 500+ | P.O.A. |
Technical documents
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
170 A
Maximum Drain Source Voltage
100 V
Series
HiperFET, Polar
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
714 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
198 nC @ 10 V
Width
5.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
16.26mm
Maximum Operating Temperature
+175 °C
Height
21.46mm
Minimum Operating Temperature
-55 °C
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS