STMicroelectronics Silicon N-Channel MOSFET, 91 A, 1200 V, 4-Pin HiP247-4 SCTWA70N120G2V-4

RS Stock No.: 233-0475PBrand: STMicroelectronicsManufacturers Part No.: SCTWA70N120G2V-4
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Technical documents

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

91 A

Maximum Drain Source Voltage

1200 V

Package Type

HiP247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.03 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.9V

Number of Elements per Chip

1

Transistor Material

Silicon

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STMicroelectronics Silicon N-Channel MOSFET, 91 A, 1200 V, 4-Pin HiP247-4 SCTWA70N120G2V-4
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Available in multiples of 1.

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Available in multiples of 1
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2P.O.A.
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4P.O.A.
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7P.O.A.
8P.O.A.
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11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

P.O.A.

STMicroelectronics Silicon N-Channel MOSFET, 91 A, 1200 V, 4-Pin HiP247-4 SCTWA70N120G2V-4
Stock information temporarily unavailable.
Select packaging type

Production pack (Tube)

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

91 A

Maximum Drain Source Voltage

1200 V

Package Type

HiP247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.03 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.9V

Number of Elements per Chip

1

Transistor Material

Silicon