Toshiba Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 SSM6N7002KFU

RS Stock No.: 171-2523Brand: ToshibaManufacturers Part No.: SSM6N7002KFU
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Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.75 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

500 mW

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

2

Width

1.25mm

Length

2mm

Typical Gate Charge @ Vgs

0.39 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.1V

Height

0.9mm

Automotive Standard

AEC-Q101

Country of Origin

Thailand

Stock information temporarily unavailable.

P.O.A.

Toshiba Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 SSM6N7002KFU
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 100.

Production -

Available in multiples of 100.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 100
1P.O.A.
101P.O.A.
201P.O.A.
301P.O.A.
401P.O.A.
501P.O.A.
601P.O.A.
701P.O.A.
801P.O.A.
901P.O.A.
1001P.O.A.
1101P.O.A.
1201P.O.A.
1301P.O.A.
1401P.O.A.

P.O.A.

Toshiba Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 SSM6N7002KFU
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 100.

Production -

Available in multiples of 100.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 100
1P.O.A.
101P.O.A.
201P.O.A.
301P.O.A.
401P.O.A.
501P.O.A.
601P.O.A.
701P.O.A.
801P.O.A.
901P.O.A.
1001P.O.A.
1101P.O.A.
1201P.O.A.
1301P.O.A.
1401P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.75 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

500 mW

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

2

Width

1.25mm

Length

2mm

Typical Gate Charge @ Vgs

0.39 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.1V

Height

0.9mm

Automotive Standard

AEC-Q101

Country of Origin

Thailand