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Toshiba N-Channel MOSFET, 90 A, 100 V, 3-Pin TO-220 TK40E10N1,S1X(S

RS Stock No.: 827-6220Brand: ToshibaManufacturers Part No.: TK40E10N1,S1X(S
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Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

90 A

Maximum Drain Source Voltage

100 V

Series

TK

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

8.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

126 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.45mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.16mm

Typical Gate Charge @ Vgs

49 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15.1mm

Country of Origin

China

Product details

MOSFET Transistors, Toshiba

Stock information temporarily unavailable.

P.O.A.

Toshiba N-Channel MOSFET, 90 A, 100 V, 3-Pin TO-220 TK40E10N1,S1X(S
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 5
1P.O.A.
6P.O.A.
11P.O.A.
16P.O.A.
21P.O.A.
26P.O.A.
31P.O.A.
36P.O.A.
41P.O.A.
46P.O.A.
51P.O.A.
56P.O.A.
61P.O.A.
66P.O.A.
71P.O.A.

P.O.A.

Toshiba N-Channel MOSFET, 90 A, 100 V, 3-Pin TO-220 TK40E10N1,S1X(S
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 5
1P.O.A.
6P.O.A.
11P.O.A.
16P.O.A.
21P.O.A.
26P.O.A.
31P.O.A.
36P.O.A.
41P.O.A.
46P.O.A.
51P.O.A.
56P.O.A.
61P.O.A.
66P.O.A.
71P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

90 A

Maximum Drain Source Voltage

100 V

Series

TK

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

8.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

126 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.45mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.16mm

Typical Gate Charge @ Vgs

49 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15.1mm

Country of Origin

China

Product details

MOSFET Transistors, Toshiba