Toshiba TK N-Channel MOSFET, 62 A, 600 V, 3-Pin TO-247 TK62N60W,S1VF(S
Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
62 A
Maximum Drain Source Voltage
600 V
Package Type
TO-247
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
400 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
15.94mm
Typical Gate Charge @ Vgs
180 nC @ 10 V
Number of Elements per Chip
1
Width
5.02mm
Height
20.95mm
Country of Origin
China
Product details
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
P.O.A.
1
P.O.A.
1
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Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
62 A
Maximum Drain Source Voltage
600 V
Package Type
TO-247
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
400 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
15.94mm
Typical Gate Charge @ Vgs
180 nC @ 10 V
Number of Elements per Chip
1
Width
5.02mm
Height
20.95mm
Country of Origin
China
Product details