Technical documents
Specifications
Brand
DiodesZetexTransistor Type
NPN
Maximum DC Collector Current
800 mA
Maximum Collector Emitter Voltage
700 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
800 mW
Transistor Configuration
Single
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
4.7 x 3.7 x 4.7mm
Country of Origin
China
Product details
High Voltage Transistors, Diodes Inc
Transistors, Diodes Inc

P.O.A.
1
P.O.A.
1
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Technical documents
Specifications
Brand
DiodesZetexTransistor Type
NPN
Maximum DC Collector Current
800 mA
Maximum Collector Emitter Voltage
700 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
800 mW
Transistor Configuration
Single
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
4.7 x 3.7 x 4.7mm
Country of Origin
China
Product details
High Voltage Transistors, Diodes Inc
Transistors, Diodes Inc
