Infineon BFR93AE6327HTSA1 NPN Transistor, 35 mA, 12 V, 3-Pin SOT-23

RS Stock No.: 911-4726Brand: InfineonManufacturers Part No.: BFR93AE6327HTSA1
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Technical documents

Specifications

Transistor Type

NPN

Maximum DC Collector Current

35 mA

Maximum Collector Emitter Voltage

12 V

Package Type

SOT-23 (TO-236AB)

Mounting Type

Surface Mount

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Collector Base Voltage

15 V

Maximum Emitter Base Voltage

2 V

Maximum Operating Frequency

6000 MHz

Pin Count

3

Number of Elements per Chip

1

Dimensions

1 x 3 x 1.4mm

Maximum Operating Temperature

+175 °C

Country of Origin

China

Product details

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P.O.A.

Infineon BFR93AE6327HTSA1 NPN Transistor, 35 mA, 12 V, 3-Pin SOT-23

P.O.A.

Infineon BFR93AE6327HTSA1 NPN Transistor, 35 mA, 12 V, 3-Pin SOT-23
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

You may be interested in

Technical documents

Specifications

Transistor Type

NPN

Maximum DC Collector Current

35 mA

Maximum Collector Emitter Voltage

12 V

Package Type

SOT-23 (TO-236AB)

Mounting Type

Surface Mount

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Collector Base Voltage

15 V

Maximum Emitter Base Voltage

2 V

Maximum Operating Frequency

6000 MHz

Pin Count

3

Number of Elements per Chip

1

Dimensions

1 x 3 x 1.4mm

Maximum Operating Temperature

+175 °C

Country of Origin

China

Product details

RF Bipolar Transistors, Infineon

Bipolar Transistors, Infineon

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