N-Channel MOSFET, 15 A, 900 V, 3-Pin TO-220 FP Infineon IPA90R340C3XKSA1

RS Stock No.: 110-9088PBrand: InfineonManufacturers Part No.: IPA90R340C3XKSA1
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

15 A

Maximum Drain Source Voltage

900 V

Series

CoolMOS™ C3

Package Type

TO-220 FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

340 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

4.85mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

10.65mm

Typical Gate Charge @ Vgs

94 nC @ 10 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

16.15mm

Product details

Infineon CoolMOS™C3 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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P.O.A.

N-Channel MOSFET, 15 A, 900 V, 3-Pin TO-220 FP Infineon IPA90R340C3XKSA1
Select packaging type

P.O.A.

N-Channel MOSFET, 15 A, 900 V, 3-Pin TO-220 FP Infineon IPA90R340C3XKSA1
Stock information temporarily unavailable.
Select packaging type

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

15 A

Maximum Drain Source Voltage

900 V

Series

CoolMOS™ C3

Package Type

TO-220 FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

340 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

4.85mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

10.65mm

Typical Gate Charge @ Vgs

94 nC @ 10 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

16.15mm

Product details

Infineon CoolMOS™C3 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.