Infineon CoolMOS™ P7 N-Channel MOSFET, 4 A, 800 V, 3-Pin DPAK IPD80R1K4P7ATMA1

RS Stock No.: 168-5917Brand: InfineonManufacturers Part No.: IPD80R1K4P7ATMA1
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

800 V

Package Type

DPAK (TO-252)

Series

CoolMOS™ P7

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

32 W

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

6.22mm

Length

6.73mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Forward Diode Voltage

0.9V

Height

2.41mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

Infineon CoolMOS™P7 Power MOSFET

The 800V CoolMOS P7 Power MOSFET family establishes even higher efficiency and thermal performance. Suitable applications are power adapters, LED lighting, audio, industrial and auxiliary power.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Stock information temporarily unavailable.

P.O.A.

Infineon CoolMOS™ P7 N-Channel MOSFET, 4 A, 800 V, 3-Pin DPAK IPD80R1K4P7ATMA1

1

Available in multiples of 2500
1P.O.A.
2501P.O.A.
5001P.O.A.
7501P.O.A.
10001P.O.A.
12501P.O.A.
15001P.O.A.
17501P.O.A.
20001P.O.A.
22501P.O.A.
25001P.O.A.
27501P.O.A.
30001P.O.A.
32501P.O.A.
35001P.O.A.

P.O.A.

Infineon CoolMOS™ P7 N-Channel MOSFET, 4 A, 800 V, 3-Pin DPAK IPD80R1K4P7ATMA1
Stock information temporarily unavailable.

1

Available in multiples of 2500
1P.O.A.
2501P.O.A.
5001P.O.A.
7501P.O.A.
10001P.O.A.
12501P.O.A.
15001P.O.A.
17501P.O.A.
20001P.O.A.
22501P.O.A.
25001P.O.A.
27501P.O.A.
30001P.O.A.
32501P.O.A.
35001P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

800 V

Package Type

DPAK (TO-252)

Series

CoolMOS™ P7

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

32 W

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

6.22mm

Length

6.73mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Forward Diode Voltage

0.9V

Height

2.41mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

Infineon CoolMOS™P7 Power MOSFET

The 800V CoolMOS P7 Power MOSFET family establishes even higher efficiency and thermal performance. Suitable applications are power adapters, LED lighting, audio, industrial and auxiliary power.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.