Infineon N-Channel MOSFET, 6 A, 800 V, 3-Pin IPAK IPS80R900P7AKMA1

RS Stock No.: 214-9110PBrand: InfineonManufacturers Part No.: IPS80R900P7AKMA1
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

800 V

Series

CoolMOS™ P7

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.9 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Transistor Material

Si

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P.O.A.

Each (Supplied in a Tube) (ex VAT)

Infineon N-Channel MOSFET, 6 A, 800 V, 3-Pin IPAK IPS80R900P7AKMA1
Select packaging type

P.O.A.

Each (Supplied in a Tube) (ex VAT)

Infineon N-Channel MOSFET, 6 A, 800 V, 3-Pin IPAK IPS80R900P7AKMA1
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

800 V

Series

CoolMOS™ P7

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.9 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Transistor Material

Si