N-Channel MOSFET Transistor, 11 A, 30 V, 8-Pin SOIC International Rectifier IRF7807ZPBF
Technical documents
Specifications
Channel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Typical Gate Charge @ Vgs
7.2 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
1.5mm
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P.O.A.
Production pack (Tube)
5
P.O.A.
Production pack (Tube)
5
Buy in bulk
| quantity | Unit price |
|---|---|
| 5 - 20 | P.O.A. |
| 25 - 95 | P.O.A. |
| 100 - 245 | P.O.A. |
| 250 - 495 | P.O.A. |
| 500+ | P.O.A. |
Technical documents
Specifications
Channel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Typical Gate Charge @ Vgs
7.2 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
1.5mm