Nexperia N-Channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 BSH108,215

RS Stock No.: 124-2287Brand: NexperiaManufacturers Part No.: BSH108,215
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

1.9 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

830 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

1.4mm

Length

3mm

Typical Gate Charge @ Vgs

6.4 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-65 °C

Height

1mm

Country of Origin

China

Product details

N-Channel MOSFET, up to 30V

MOSFET Transistors, NXP Semiconductors

Stock information temporarily unavailable.

P.O.A.

Nexperia N-Channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 BSH108,215

P.O.A.

Nexperia N-Channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 BSH108,215
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

1.9 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

830 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

1.4mm

Length

3mm

Typical Gate Charge @ Vgs

6.4 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-65 °C

Height

1mm

Country of Origin

China

Product details

N-Channel MOSFET, up to 30V

MOSFET Transistors, NXP Semiconductors