Technical documents
Specifications
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
P
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Maximum Gate Source Voltage
-25 V, +25 V
Pin Count
6
Transistor Configuration
Single
Minimum Gate Threshold Voltage
1V
Mounting Type
Surface Mount
Maximum Drain Source Voltage
30 V
Maximum Operating Temperature
+150 °C
Height
0.75mm
Length
2mm
Series
PowerTrench
Width
2mm
Maximum Power Dissipation
2.4 W
Maximum Continuous Drain Current
6.8 A
Package Type
MLP
Maximum Drain Source Resistance
35 mΩ
Brand
ON SemiconductorTypical Gate Charge @ Vgs
16 nC @ 10 V
Stock information temporarily unavailable.
Please check again later.
P.O.A.
Standard
5
P.O.A.
Standard
5
Buy in bulk
quantity | Unit price |
---|---|
5 - 20 | P.O.A. |
25 - 95 | P.O.A. |
100 - 245 | P.O.A. |
250 - 495 | P.O.A. |
500+ | P.O.A. |
Technical documents
Specifications
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
P
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Maximum Gate Source Voltage
-25 V, +25 V
Pin Count
6
Transistor Configuration
Single
Minimum Gate Threshold Voltage
1V
Mounting Type
Surface Mount
Maximum Drain Source Voltage
30 V
Maximum Operating Temperature
+150 °C
Height
0.75mm
Length
2mm
Series
PowerTrench
Width
2mm
Maximum Power Dissipation
2.4 W
Maximum Continuous Drain Current
6.8 A
Package Type
MLP
Maximum Drain Source Resistance
35 mΩ
Brand
ON SemiconductorTypical Gate Charge @ Vgs
16 nC @ 10 V