onsemi PowerTrench N-Channel MOSFET, 8 A, 100 V, 3-Pin DPAK FDD86102LZ

RS Stock No.: 166-2647Brand: onsemiManufacturers Part No.: FDD86102LZ
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Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

100 V

Series

PowerTrench

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

54 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Length

6.73mm

Typical Gate Charge @ Vgs

18 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Height

2.39mm

Minimum Operating Temperature

-55 °C

Product details

PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Stock information temporarily unavailable.

P.O.A.

onsemi PowerTrench N-Channel MOSFET, 8 A, 100 V, 3-Pin DPAK FDD86102LZ

P.O.A.

onsemi PowerTrench N-Channel MOSFET, 8 A, 100 V, 3-Pin DPAK FDD86102LZ
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

100 V

Series

PowerTrench

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

54 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Length

6.73mm

Typical Gate Charge @ Vgs

18 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Height

2.39mm

Minimum Operating Temperature

-55 °C

Product details

PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.