onsemi P-Channel MOSFET, 8.8 A, 30 V, 8-Pin SOIC FDS4435BZ

RS Stock No.: 671-0508PBrand: onsemiManufacturers Part No.: FDS4435BZ
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Technical documents

Specifications

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

8.8 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Typical Gate Charge @ Vgs

29 nC @ 10 V

Width

4mm

Number of Elements per Chip

1

Length

5mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Height

1.5mm

Minimum Operating Temperature

-55 °C

Product details

Automotive P-Channel MOSFET, Fairchild Semiconductor

Fairchild Semiconductor is providing solutions that solve complex challenges in the automotive market With a thorough command of quality, safety, and reliability standards.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Stock information temporarily unavailable.

P.O.A.

Each (Supplied on a Reel) (ex VAT)

onsemi P-Channel MOSFET, 8.8 A, 30 V, 8-Pin SOIC FDS4435BZ
Select packaging type

P.O.A.

Each (Supplied on a Reel) (ex VAT)

onsemi P-Channel MOSFET, 8.8 A, 30 V, 8-Pin SOIC FDS4435BZ
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

8.8 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Typical Gate Charge @ Vgs

29 nC @ 10 V

Width

4mm

Number of Elements per Chip

1

Length

5mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Height

1.5mm

Minimum Operating Temperature

-55 °C

Product details

Automotive P-Channel MOSFET, Fairchild Semiconductor

Fairchild Semiconductor is providing solutions that solve complex challenges in the automotive market With a thorough command of quality, safety, and reliability standards.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.