onsemi PowerTrench N-Channel MOSFET, 10.8 A, 40 V, 8-Pin SOIC FDS4480

RS Stock No.: 166-2602Brand: onsemiManufacturers Part No.: FDS4480
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Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

10.8 A

Maximum Drain Source Voltage

40 V

Series

PowerTrench

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

12 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +30 V

Number of Elements per Chip

1

Width

4mm

Length

5mm

Typical Gate Charge @ Vgs

29 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

1.5mm

Product details

PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Stock information temporarily unavailable.

P.O.A.

onsemi PowerTrench N-Channel MOSFET, 10.8 A, 40 V, 8-Pin SOIC FDS4480

P.O.A.

onsemi PowerTrench N-Channel MOSFET, 10.8 A, 40 V, 8-Pin SOIC FDS4480
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

10.8 A

Maximum Drain Source Voltage

40 V

Series

PowerTrench

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

12 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +30 V

Number of Elements per Chip

1

Width

4mm

Length

5mm

Typical Gate Charge @ Vgs

29 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

1.5mm

Product details

PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.