onsemi SiC Power SiC N-Channel MOSFET, 145 A, 650 V, 7-Pin D2PAK NTBG015N065SC1

RS Stock No.: 229-6442Brand: onsemiManufacturers Part No.: NTBG015N065SC1
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Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

145 A

Maximum Drain Source Voltage

650 V

Series

SiC Power

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

0.018 Ω

Maximum Gate Threshold Voltage

4.3V

Number of Elements per Chip

1

Transistor Material

SiC

Stock information temporarily unavailable.

P.O.A.

onsemi SiC Power SiC N-Channel MOSFET, 145 A, 650 V, 7-Pin D2PAK NTBG015N065SC1
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Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

P.O.A.

onsemi SiC Power SiC N-Channel MOSFET, 145 A, 650 V, 7-Pin D2PAK NTBG015N065SC1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

145 A

Maximum Drain Source Voltage

650 V

Series

SiC Power

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

0.018 Ω

Maximum Gate Threshold Voltage

4.3V

Number of Elements per Chip

1

Transistor Material

SiC