Technical documents
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
6 nC @ 10 V
Width
1.3mm
Minimum Operating Temperature
-55 °C
Height
1mm
Product details
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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P.O.A.
10
P.O.A.
10
Technical documents
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
6 nC @ 10 V
Width
1.3mm
Minimum Operating Temperature
-55 °C
Height
1mm
Product details