OSI Optoelectronics, OSD60-5T IR Si Photodiode, Through Hole TO-8

RS Stock No.: 183-7124Brand: OSI OptoelectronicsManufacturers Part No.: OSD60-5T
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Technical documents

Specifications

Brand

OSI Optoelectronics

Spectrums Detected

Infrared

Wavelength of Peak Sensitivity

436nm

Package Type

TO-8

Mounting Type

Through Hole

Amplifier Function

No

Number of Pins

3

Diode Material

Si

Minimum Wavelength Detected

350nm

Maximum Wavelength Detected

1100nm

Height

0.17in

Diameter

13.97mm

Peak Photo Sensitivity

0.21A/W

Polarity

Reverse

Typical Rise Time

30µs

Series

OSD

Country of Origin

United States

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P.O.A.

OSI Optoelectronics, OSD60-5T IR Si Photodiode, Through Hole TO-8

10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

P.O.A.

OSI Optoelectronics, OSD60-5T IR Si Photodiode, Through Hole TO-8
Stock information temporarily unavailable.

10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.
You may be interested in

Technical documents

Specifications

Brand

OSI Optoelectronics

Spectrums Detected

Infrared

Wavelength of Peak Sensitivity

436nm

Package Type

TO-8

Mounting Type

Through Hole

Amplifier Function

No

Number of Pins

3

Diode Material

Si

Minimum Wavelength Detected

350nm

Maximum Wavelength Detected

1100nm

Height

0.17in

Diameter

13.97mm

Peak Photo Sensitivity

0.21A/W

Polarity

Reverse

Typical Rise Time

30µs

Series

OSD

Country of Origin

United States

You may be interested in