N-Channel MOSFET, 5 A, 70 V, 4-Pin DA Semelab D1001UK

RS Stock No.: 177-5481Brand: SemelabManufacturers Part No.: D1001UKIMPA: 0
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Technical documents

Specifications

Channel Mode

Enhancement

Number of Elements per Chip

1

Channel Type

N

Transistor Material

Si

Pin Count

4

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Configuration

Single

Mounting Type

Screw Mount

Maximum Operating Temperature

+200 °C

Maximum Drain Source Voltage

70 V

Maximum Gate Threshold Voltage

7V

Series

TetraFET

Maximum Continuous Drain Current

5 A

Maximum Power Dissipation

50 W

Height

6.6mm

Width

9.52mm

Length

24.76mm

Maximum Drain Source Resistance

1 Ω

Package Type

DA

Brand

Semelab

Country of Origin

United Kingdom

Product details

Fully Moulded Subminiature GB Series

Compact structure, less than 7mm in height excluding operating plunger
Pitch between terminals 2.54mm
Fully moulded construction with excellent electrostatic voltage resistance
Completely washable high ingress protection design
Certification: IECQ

Note: Button is optional, see later in this section

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P.O.A.

N-Channel MOSFET, 5 A, 70 V, 4-Pin DA Semelab D1001UK

P.O.A.

N-Channel MOSFET, 5 A, 70 V, 4-Pin DA Semelab D1001UK
Stock information temporarily unavailable.

Technical documents

Specifications

Channel Mode

Enhancement

Number of Elements per Chip

1

Channel Type

N

Transistor Material

Si

Pin Count

4

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Configuration

Single

Mounting Type

Screw Mount

Maximum Operating Temperature

+200 °C

Maximum Drain Source Voltage

70 V

Maximum Gate Threshold Voltage

7V

Series

TetraFET

Maximum Continuous Drain Current

5 A

Maximum Power Dissipation

50 W

Height

6.6mm

Width

9.52mm

Length

24.76mm

Maximum Drain Source Resistance

1 Ω

Package Type

DA

Brand

Semelab

Country of Origin

United Kingdom

Product details

Fully Moulded Subminiature GB Series

Compact structure, less than 7mm in height excluding operating plunger
Pitch between terminals 2.54mm
Fully moulded construction with excellent electrostatic voltage resistance
Completely washable high ingress protection design
Certification: IECQ

Note: Button is optional, see later in this section