N-Channel MOSFET, 9 A, 200 V, 3-Pin TO-220 STMicroelectronics IRF630

RS Stock No.: 486-0171Brand: STMicroelectronicsManufacturers Part No.: IRF630
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

200 V

Series

STripFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

31 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.4mm

Width

4.6mm

Transistor Material

Si

Minimum Operating Temperature

-65 °C

Height

9.15mm

Product details

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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N-Channel MOSFET, 9 A, 200 V, 3-Pin TO-220 STMicroelectronics IRF630
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P.O.A.

N-Channel MOSFET, 9 A, 200 V, 3-Pin TO-220 STMicroelectronics IRF630
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25 - 95P.O.A.
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250 - 495P.O.A.
500+P.O.A.
You may be interested in

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

200 V

Series

STripFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

31 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.4mm

Width

4.6mm

Transistor Material

Si

Minimum Operating Temperature

-65 °C

Height

9.15mm

Product details

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

You may be interested in