N-Channel MOSFET, 1.4 A, 1000 V, 3-Pin TO-220AB Vishay IRFBG20PBF

RS Stock No.: 542-9563PBrand: VishayManufacturers Part No.: IRFBG20PBF
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.4 A

Maximum Drain Source Voltage

1000 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

11 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

54 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

38 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.41mm

Width

4.7mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

9.01mm

Product details

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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P.O.A.

N-Channel MOSFET, 1.4 A, 1000 V, 3-Pin TO-220AB Vishay IRFBG20PBF
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Available in multiples of 1.

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Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

25

Available in multiples of 25
25P.O.A.
26P.O.A.
27P.O.A.
28P.O.A.
29P.O.A.
30P.O.A.
31P.O.A.
32P.O.A.
33P.O.A.
34P.O.A.
35P.O.A.
36P.O.A.
37P.O.A.
38P.O.A.
39P.O.A.

P.O.A.

N-Channel MOSFET, 1.4 A, 1000 V, 3-Pin TO-220AB Vishay IRFBG20PBF
Stock information temporarily unavailable.
Select packaging type

Production pack (Tape)

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

25

Available in multiples of 25
25P.O.A.
26P.O.A.
27P.O.A.
28P.O.A.
29P.O.A.
30P.O.A.
31P.O.A.
32P.O.A.
33P.O.A.
34P.O.A.
35P.O.A.
36P.O.A.
37P.O.A.
38P.O.A.
39P.O.A.

Buy in bulk

quantityUnit price
25 - 99P.O.A.
100 - 249P.O.A.
250+P.O.A.
You may be interested in

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.4 A

Maximum Drain Source Voltage

1000 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

11 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

54 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

38 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.41mm

Width

4.7mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

9.01mm

Product details

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

You may be interested in