P-Channel MOSFET, 18.3 A, 30 V, 8-Pin SO-8 Vishay Si4425FDY-T1-GE3

RS Stock No.: 200-6797Brand: VishayManufacturers Part No.: Si4425FDY-T1-GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

18.3 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET® Gen IV

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.016 Ω, 0.0095 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

1

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P.O.A.

P-Channel MOSFET, 18.3 A, 30 V, 8-Pin SO-8 Vishay Si4425FDY-T1-GE3

50

Available in multiples of 50
50P.O.A.
100P.O.A.
150P.O.A.
200P.O.A.
250P.O.A.
300P.O.A.
350P.O.A.
400P.O.A.
450P.O.A.
500P.O.A.
550P.O.A.
600P.O.A.
650P.O.A.
700P.O.A.
750P.O.A.

P.O.A.

P-Channel MOSFET, 18.3 A, 30 V, 8-Pin SO-8 Vishay Si4425FDY-T1-GE3
Stock information temporarily unavailable.

50

Available in multiples of 50
50P.O.A.
100P.O.A.
150P.O.A.
200P.O.A.
250P.O.A.
300P.O.A.
350P.O.A.
400P.O.A.
450P.O.A.
500P.O.A.
550P.O.A.
600P.O.A.
650P.O.A.
700P.O.A.
750P.O.A.

Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

18.3 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET® Gen IV

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.016 Ω, 0.0095 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

1