N-Channel MOSFET, 29 A, 650 V, 3-Pin TO-220AB Vishay SiHP105N60EF-GE3

RS Stock No.: 200-6794Brand: VishayManufacturers Part No.: SiHP105N60EF-GE3
brand-logo
View all in MOSFETs

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

29 A

Maximum Drain Source Voltage

650 V

Series

EF

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.088 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

P.O.A.

N-Channel MOSFET, 29 A, 650 V, 3-Pin TO-220AB Vishay SiHP105N60EF-GE3

50

Available in multiples of 50
50P.O.A.
100P.O.A.
150P.O.A.
200P.O.A.
250P.O.A.
300P.O.A.
350P.O.A.
400P.O.A.
450P.O.A.
500P.O.A.
550P.O.A.
600P.O.A.
650P.O.A.
700P.O.A.
750P.O.A.

P.O.A.

N-Channel MOSFET, 29 A, 650 V, 3-Pin TO-220AB Vishay SiHP105N60EF-GE3
Stock information temporarily unavailable.

50

Available in multiples of 50
50P.O.A.
100P.O.A.
150P.O.A.
200P.O.A.
250P.O.A.
300P.O.A.
350P.O.A.
400P.O.A.
450P.O.A.
500P.O.A.
550P.O.A.
600P.O.A.
650P.O.A.
700P.O.A.
750P.O.A.

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

29 A

Maximum Drain Source Voltage

650 V

Series

EF

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.088 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1