N-Channel MOSFET, 60 A, 40 V, 8-Pin PowerPAK SO-8L Vishay SQJA38EP-T1_GE3

RS Stock No.: 188-5120PBrand: VishayManufacturers Part No.: SQJA38EP-T1_GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

40 V

Package Type

PowerPAK SO-8L

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

6.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

68 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

4.47mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

5mm

Typical Gate Charge @ Vgs

48.2 nC @ 10 V

Height

1.01mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Country of Origin

China

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P.O.A.

N-Channel MOSFET, 60 A, 40 V, 8-Pin PowerPAK SO-8L Vishay SQJA38EP-T1_GE3
Select packaging type

P.O.A.

N-Channel MOSFET, 60 A, 40 V, 8-Pin PowerPAK SO-8L Vishay SQJA38EP-T1_GE3
Stock information temporarily unavailable.
Select packaging type

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

40 V

Package Type

PowerPAK SO-8L

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

6.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

68 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

4.47mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

5mm

Typical Gate Charge @ Vgs

48.2 nC @ 10 V

Height

1.01mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Country of Origin

China