Wolfspeed SiC N-Channel MOSFET, 90 A, 1200 V, 3-Pin TO-247 C2M0025120D

RS Stock No.: 915-8818PBrand: WolfspeedManufacturers Part No.: C2M0025120D
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Technical documents

Specifications

Brand

Wolfspeed

Channel Type

N

Maximum Continuous Drain Current

90 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

34 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

463 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+25 V

Width

21.1mm

Transistor Material

SiC

Number of Elements per Chip

1

Length

16.13mm

Typical Gate Charge @ Vgs

161 nC @ 20 V

Maximum Operating Temperature

+150 °C

Height

5.21mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

3.3V

Country of Origin

China

Product details

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation

MOSFET Transistors, Wolfspeed

Stock information temporarily unavailable.

P.O.A.

Wolfspeed SiC N-Channel MOSFET, 90 A, 1200 V, 3-Pin TO-247 C2M0025120D
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Available in multiples of 1.

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Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
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P.O.A.

Wolfspeed SiC N-Channel MOSFET, 90 A, 1200 V, 3-Pin TO-247 C2M0025120D
Stock information temporarily unavailable.
Select packaging type

Production pack (Tube)

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

Wolfspeed

Channel Type

N

Maximum Continuous Drain Current

90 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

34 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

463 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+25 V

Width

21.1mm

Transistor Material

SiC

Number of Elements per Chip

1

Length

16.13mm

Typical Gate Charge @ Vgs

161 nC @ 20 V

Maximum Operating Temperature

+150 °C

Height

5.21mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

3.3V

Country of Origin

China

Product details

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation

MOSFET Transistors, Wolfspeed