Diodes Inc Dual N/P-Channel MOSFET, 7 A, 8.5 A, 30 V, 8-Pin SOIC DMC3021LSD-13
Technical documents
Specifications
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
7 A, 8.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
32 mΩ, 53 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
16.1 nC @ 10 V, 21.1 nC @ 4.5 V
Width
3.95mm
Transistor Material
Si
Number of Elements per Chip
2
Length
4.95mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.5mm
Country of Origin
China
Product details
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
P.O.A.
Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
25
P.O.A.
Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
25
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Technical documents
Specifications
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
7 A, 8.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
32 mΩ, 53 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
16.1 nC @ 10 V, 21.1 nC @ 4.5 V
Width
3.95mm
Transistor Material
Si
Number of Elements per Chip
2
Length
4.95mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.5mm
Country of Origin
China
Product details