Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
260 mA
Maximum Drain Source Voltage
240 V
Package Type
E-Line
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
750 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-40 V, +40 V
Maximum Operating Temperature
+150 °C
Width
2.41mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.77mm
Height
4.01mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
P.O.A.
Production pack (Tape)
25
P.O.A.
Production pack (Tape)
25
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price |
---|---|
25 - 95 | P.O.A. |
100 - 245 | P.O.A. |
250 - 495 | P.O.A. |
500+ | P.O.A. |
Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
260 mA
Maximum Drain Source Voltage
240 V
Package Type
E-Line
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
750 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-40 V, +40 V
Maximum Operating Temperature
+150 °C
Width
2.41mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.77mm
Height
4.01mm
Minimum Operating Temperature
-55 °C
Product details