Infineon AIM SiC N-Channel MOSFET, 24 A, 750 V, 7-Pin PG-TO263-7 AIMBG75R090M1HXTMA1

RS Stock No.: 349-212Brand: InfineonManufacturers Part No.: AIMBG75R090M1HXTMA1
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

750 V

Series

AIM

Package Type

PG-TO263-7

Mounting Type

Surface Mount

Pin Count

7

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Country of Origin

Malaysia

Stock information temporarily unavailable.

P.O.A.

Infineon AIM SiC N-Channel MOSFET, 24 A, 750 V, 7-Pin PG-TO263-7 AIMBG75R090M1HXTMA1

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

P.O.A.

Infineon AIM SiC N-Channel MOSFET, 24 A, 750 V, 7-Pin PG-TO263-7 AIMBG75R090M1HXTMA1
Stock information temporarily unavailable.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

750 V

Series

AIM

Package Type

PG-TO263-7

Mounting Type

Surface Mount

Pin Count

7

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Country of Origin

Malaysia